SOI Wafers
Teknik Özellikler
Silicon on Insulator
Thick Film Fusion Bonding
All Diameters: 3” through 200mm:
Single- or Double Side Polished
CZ and FZ
Device Layer: Flatness <1µm <2µm <5µm
Buried Thermal Oxide: 0,2µm to 2,4µm
Handle: Flatness <1µm up
Any Typ, Orientation, Res.
Thickness 300µm to 2000µm